SS8050

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR (NPN) 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Collector cut-off current ICEO VCB=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE=1V, IC= 100mA 120 hFE(2) VCE=1V, IC= 800mA 40 400 DC current gain Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V fT Transition frequency VCE=10V, IC= 50mA f=30MHz 100 MHz CLASSIFICATION OF hFE(1) Rank Range L H J 120-200 200-350 300-400 B,Jan,2012 Typical Characterisitics Static Characteristic 140 hFE DC CURRENT GAIN (mA) IC COLLECTOR CURRENT 350uA 300uA 250uA 60 200uA 40 IC Ta=100℃ 400uA 80 —— COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 450uA 100 hFE 1000 500uA 120 SS8050 150uA 300 Ta=25℃ 100 30 100uA 20 IB=50uA 0 0.0 10 0.5 1.0 1.5 2.0 COLLECTOR-EMITTER VOLTAGE VCEsat 1 Ta=100℃ Ta=25℃ 30 VBEsat 1.2 300 100 100 30 COLLECTOR CURRENT IC —— 10 3 (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1000 VCE 2.5 10 1000 1500 300 IC (mA) IC —— 1.0 Ta=25℃ 0.8 Ta=100℃ 0.6 0.4 3 β=10 β=10 1 0.2 1 10 3 100 30 COLLECTOR CURRENT VBE 1500 1000 300 IC 1000 1500 1 30 10 3 (mA) 100 COLLECTOR CURRENT —— IC Cob/ Cib 200 IC (mA) —— VCB/ VEB f=1MHz IE=0/IC=0 100 (pF) (mA) C 30 Ta=25℃ 10 Cob 10 COMMON EMITTER VCE=1V 0.4 0.6 fT 0.8 —— 1.0 VBE 1 0.1 1.2 REVERSE VOLTAGE IC PC 350 300 100 30 10 3 3 1 0.3 (V) COLLECTOR POWER DISSIPATION PC (mW) 1000 (MHz) 30 3 3 BASE-EMMITER VOLTAGE fT CAPACITANCE IC COLLCETOR CURRENT Ta=100℃ 100 1 0.2 TRANSITION FREQUENCY Ta=25℃ Cib 300 1000 1500 300 VCE=10V —— V 10 20 (V) Ta 300 250 200 150 100 50 Ta=25℃ 1 1 3 30 10 COLLECTOR CURRENT IC (mA) 0 100 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,Jan,2012