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US1K

US1K

  • 厂商:

    JIANGSU(长晶)

  • 封装:

  • 描述:

  • 数据手册
  • 价格&库存
US1K 数据手册
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SMAG Plastic-Encapsulate Diodes US1A THRU US1M High Efficient Rectifier Diodes Features SMAG ●IF(AV) 1A ● VRRM 50V-1000V ●High surge current capability ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● US1X X : From A To M Limiting Values(Absolute Maximum Rating) Item Symbol Unit Test Conditions A B D US1 G J K M Repetitive Peak Reverse Voltage VRRM V 50 100 200 400 600 800 1000 Maximum RMS Voltage V RMS V 35 70 140 280 420 560 700 Average Forward Current IF(AV) A 60Hz Half-sine wave, Resistance load,T L=75℃ 1.0 Surge(Non-repetitive)Forward Current IFSM A 60Hz Half-sine wave, 1 cycle,Ta=25℃ 30 Operation Junction and Storage Temperature Range TJ,TSTG ℃ K M -55 ~ +150 Electrical Characteristics (T=25℃ Unless otherwise specified) US1 Symbol Unit Peak Forward Voltage VF V Maximum reverse recovery time trr ns Item Peak Reverse Current Thermal Resistance(Typical) IRRM1 IRRM2 RθJ-A RθJ-L μA ℃/ W Test Condition IF =1.0A B D 1.0 IF=0.5A,IR=1.0A,Irr=0.25A VRM=VRRM A G 1.3 50 J 1.7 75 Ta =25℃ 5 Ta =125℃ 50 Between junction and ambient 55 Between junction and terminal 25 Notes: Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas www.jscj-elec.com 1 Rev. - 1.1 FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT IFSM(A) IO(A) FIG.1: FORWARD CURRENT DERATING CURVE 1.0 35 30 0.8 8.3ms Single Half Sine Wave JEDEC Method 25 0.6 20 0.4 15 10 0.2 Resistive or Inductive Load P.C.B. Mounted on 0.2"×0.2" (5.0mm×5.0mm)Copper Pad Areas 5 0 0 25 50 75 100 125 150 TL(℃) 0 1 2 10 100 20 Number of Cycles FIG.4 TYPICAL REVERSE CHARACTERISTICS 100 IR(uA) IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 1000 US1A-D 10 100 Tj=100 US1G 1.0 10 Tj=25 US1J-M 0.1 1.0 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF(V) 0 20 40 60 80 100 Voltage(%) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D trr IF VR IF RL t 0 I RR IR www.jscj-elec.com 2 Rev. - 1.1 SMAG 0.106(2.70) 0.096(2.45) SMAG 4.12 1.8 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein.JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 1.1 Reel Taping Specifications For Surface Mount Dev ices- SMAG FIG:CONFIGURATION OF SURFACE MOUNTED DEVICES TAPING G 279 2.0 (11 0.079) 75 1.0 2.95 0.039 www.jscj-elec.com 4 Rev. - 1.1

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