JMTQ130P04A

JMTQ130P04A Description JMT P-channel Enhancement Mode Power MOSFET Features Application  VDS= -40V, ID= -30A RDS(ON) < 13mΩ @ VGS = -10V RDS(ON) < 19mΩ @ VGS = -4.5V  PWM Applications  Load Switch  Power Management  Advanced Trench Technology  Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired PDFN3x3-8L 100% UIS TESTED! 100% ΔVds TESTED! Marking and pin Assignment Schematic Diagram Package Marking and Ordering Information Device Marking Device OUTLINE Device Package Reel Size Reel (PCS) Per Carton (PCS) Q130P04A JMTQ130P04A TAPING PDFN3x3-8L 13inch 5000 50000 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage -40 V VGSS Gate-Source Voltage ±20 V TC = 25℃ -30 A TC = 100℃ -20 A -120 A 110 mJ 20 W 6.3 ℃/W -55 to +150 ℃ ID Continuous Drain Current IDM Pulsed Drain Current note1 EAS Single Pulsed Avalanche Energy PD Power Dissipation RθJC TJ, TSTG note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range JieJie Microelectronics CO. , Ltd Version : 1.2 -1- JMTQ130P04A Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID= -250μA -40 - - V IDSS Zero Gate Voltage Drain Current VDS= -40V, VGS=0V - - -1 μA IGSS Gate to Body Leakage Current VDS=0V, VGS= ±20V - - ±100 nA Gate Threshold Voltage VDS=VGS, ID= -250μA -1.0 -1.5 -2.5 V Static Drain-Source on-Resistance VGS= -10V, ID= -20A - 10.3 13 note3 VGS= -4.5V, ID= -10A - 13.6 19 - 3700 - pF - 340 - pF - 290 - pF - 68 - nC - 10 - nC - 14 - nC - 10 - ns - 82 - ns - 93 - ns - 74 - ns On Characteristics VGS(th) RDS(on) mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS= -20V, VGS=0V, f=1.0MHz VDS= -20V, ID= -20A, VGS= -10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDD= -20V, ID= -20A, VGS= -10V, RGEN=2.4Ω Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - -30 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - -120 A VSD Drain to Source Diode Forward Voltage VGS=0V, IS= -30A - -0.8 -1.2 V VGS=0V, IS= -30A, di/dt=100A/μs - 20 - ns - 13 - nC trr Reverse Recovery Time Qrr Reverse Recovery Charge Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ= 25℃, VDD= -20V, VG= -10V, L= 0.5mH, RG= 25Ω, IAS= -21A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% JieJie Microelectronics CO. , Ltd Version : 1.2 -2- JMTQ130P04A Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics -I D (A) 50 10V 40 40 4.5V 25℃ 4V 30 30 3V 125℃ 20 20 10 10 0 -I D (A) 50 V GS=2.5V -V DS (V) 0 1 2 3 4 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Figure 4 : Body Diode Characteristics Figure 3: On-resistance vs. Drain Current 21 -V GS (V) 0 5 R DS(ON) (mΩ) -I S(A) 10 18 15 125℃ V GS =-4.5V 12 25℃ 1 9 V GS =-10V 6 3 0 0 -I D(A) 5 10 15 20 25 0.1 0.0 30 Figure 5: Gate Charge Characteristics 10 8 0.2 0.4 V SD (V) 0.6 0.8 1.0 1.2 1.4 Figure 6: Capacitance Characteristics -VGS (V) 105 V DS =-20V I D=-20A C(pF) 10 4 C iss 6 103 C oss 4 0 0 C rss 102 2 Q g (nC) 12 24 36 -V DS (V) 1 48 60 10 72 JieJie Microelectronics CO. , Ltd 0 5 10 15 20 25 30 Version : 1.2 -3- JMTQ130P04A Figure 8: Normalized on Resistance vs. Junction Temperature Figure 7: Normalized Breakdown Voltage vs. Junction Temperature VBR(DSS) 1.3 2.5 1.2 RDS (on) 2.0 1.1 1.5 1.0 1.0 0.9 0 -100 Tj (℃) -50 0 50 100 150 0.5 -100 200 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature Figure 9: Maximum Safe Operating Area -I D (A) 35 3 10 -I D(A) 30 25 102 10μs 20 100μs 1 10 100 TC=25℃ Single pulse -1 0.01 0.1 15 1ms Limited by RDS(on) 10 Tj (℃) -50 10 10ms 100ms 5 DC -VDS (V) 1 10 0 100 0 25 50 75 Tc (℃) 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 Zth J-C (℃/W) 10-1 10 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse -2 10-3 -6 10 10-5 10-4 TP(s) 10 -3 10 -2 P DM 100 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=P DM *ZthJC +TC 10 -1 10 0 101 JieJie Microelectronics CO. , Ltd Version : 1.2 -4- JMTQ130P04A Test Circuit JieJie Microelectronics CO. , Ltd Version : 1.2 -5- JMTQ130P04A Package Mechanical Data- PDFN3x3-8L Information furnished in this document is believed to be accurate and reliable. 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