MTX1-50G

1907 Westlands Centre, 20 Westlands Road, Quarry Bay, Hong Kong Tel : (+852) 2565 6979 Fax : (+852) 2565 0319 Email : sales@jlworld.com Website : www.jlworld.com Page 1 of 4 060472-A2 MTX1-50G Single Axis Accelerometer – 50 g Single Axis Silicon Accelerometer Die The MTX1-50G series capacitive silicon accelerometer sensors are manufactured in class 10 clean room using state of the art CMOS and bulk micro-machining capabilities. They are manufactured in six inched wafers, utilizing DRIE techniques and patented processes. An applied force or acceleration (including gravity) causes a capacitance shift in a differential capacitor, which is converted to a pulse density modulation by an integrated ASIC. The sensing element is a differential capacitor fabricated in single crystal silicon with a high aspect ratio thereby offering excellent performance in sensitivity and linearity. The sensing element is enclosed in a hermetic wafer-level package using wafer to wafer bonding. This allows it to be assembled in different types of packaging including low cost over-molded plastic packages. Dies are fully probed and inspected and can be shipped in waffle pack. FEATURES • • • • • • • Excellent accuracy over 50g range Good temperature performance Low cost design Capacitive, high performance 100% factory tested High volume manufacturing Patented process THE MAIN FIELD OF APPLICATIONS Acceleration Measurement Vibration measurement Inclination Measurement Document #: DS-SDEV-MTX1-50G Rev A 1907 Westlands Centre, 20 Westlands Road, Quarry Bay, Hong Kong Tel : (+852) 2565 6979 Fax : (+852) 2565 0319 Email : sales@jlworld.com Website : www.jlworld.com Page 2 of 4 060472-A2 MTX1-50G Single Axis Accelerometer – 50 g TECHNICAL DATA Maximum ratings Specification Operating Temperature Storage Temperature Min. -40 -40 Typ. Max. +85 125 Unit ° C ° C Data Temperature=22±2° Relative humidity=45±5% C, Specification Min. Typ. Max. Unit Measuring Range Probe voltage Leakage current Shock survival range -50 - 3 - +50 5 5 g V nA - 2000 - g Nominal Capacitance @ 0V 0.5 1 1.5 pF Delta Capacitance Capacitance change @3V Sensitivity 0 20 0.7 200 50 1 400 80 1.3 fF fF fF/g Document #: DS-SDEV-MTX1-50G Rev A 1907 Westlands Centre, 20 Westlands Road, Quarry Bay, Hong Kong Tel : (+852) 2565 6979 Fax : (+852) 2565 0319 Email : sales@jlworld.com Website : www.jlworld.com Page 3 of 4 060472-A2 MTX1-50G Single Axis Accelerometer – 50 g DIMENSIONS Plan View (w silicon cap) Plan View (w/o silicon cap) AA FF EE BB CC D KK XL VCC` XR Dim AA BB CC DD EE FF KK LL MM NN OO PP QQ RR Typical 3020 275 1850 225 220 200 200 200 300 200 300 200 300 350 LL MM NN OO PP QQ RR Side view JJ II HH GG All units in um. Dim GG HH (glass substrate) II (silicon device wafer) JJ (silicon cap wafer) Typical 2350 550 25 450 Document #: DS-SDEV-MTX1-50G Rev A 1907 Westlands Centre, 20 Westlands Road, Quarry Bay, Hong Kong Tel : (+852) 2565 6979 Fax : (+852) 2565 0319 Email : sales@jlworld.com Website : www.jlworld.com Page 4 of 4 060472-A2 MTX1-50G Single Axis Accelerometer – 50 g ELECTRICAL AND DIE LAYOUT XL VCC` XR Pad Description XL XR VCC X axis left capacitance (fixed electrode) X axis right capacitance(fixed electrode) Common electrode for applying voltage bias (moving electrode) XL VCC` XR Document #: DS-SDEV-MTX1-50G Rev A