2N5498

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain and low saturation voltage ・High Safe Operating Area APPLICATIONS ・Designed for high power audio, disk head positioners and other linearapplications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5498 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 150 130 7 15 4 200 150 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCER VCEsat-1 VCEsat-2 ICEO ICEX IEBO hFE fT PARAMETER Collector-emitter breakdwon voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=0.2A ;RBE=100Ohm IC=8A; IB=0.8A IC=15A ;IB=3A VCE=130V; IB=0 VCE=130V; VBE(off)=1.5V TC=150℃ VEB=7V; IC=0 IC=15A ; VCE=5V IC=1A ; VCE=10V 10 1 MIN 130 150 TYP. 2N5498 MAX UNIT V V 1.4 4.0 2.0 2.0 10.0 1.0 50 V V mA mA mA MHz JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N5498 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic