2N5804

Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown APPLICATIONS ・Switching regulator ・Inverters ・Solenoid and relay drivers ・Motor controls PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5804 2N5805 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO PARAMETER 2N5804 Collector-base voltage 2N5805 2N5804 VCEO VEBO IC PD Tj Tstg Collector-emitter voltage 2N5805 Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 300 6 5 110 150 -65~200 V A W ℃ ℃ Open emitter 375 225 V CONDITIONS VALUE 300 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5804 2N5805 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5804 VCEO(sus) Collector-emitter sustaining voltage 2N5805 VCEsat VBEsat ICEO Collector-emitter saturation voltage Collector-emitter saturation voltage Collector cut-off current 2N5804 ICEV Collector cut-off current 2N5805 IEBO hFE fT Emitter cut-off current DC current gain Trainsistion frequency VEB=7V; IC=0 IC=5A ; VCE=4V IC=1A ; VCE=10V 20 15 VCE=RatedVCE; VBE(off)=1.5V 10 1.0 100 MHz mA IC=5A; IB=1A IC=5A ;IB=1A VCE=RatedVCE; IB=0 IC=0.1A ;IB=0 300 1.0 1.5 10 12 mA V V mA CONDITIONS MIN 225 V TYP. MAX UNIT JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N5804 2N5805 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic