2N6299

Product Specification www.jmnic.com Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・DARLINGTON ・Low collector saturation voltage ・Complement to type 2N6300/6301 APPLICATIONS ・General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6298 2N6299 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER 2N6298 Collector-base voltage 2N6299 2N6298 VCEO VEBO IC ICM IB PT Tj Tstg Collector-emitter voltage 2N6299 Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 80 5 8 16 0.12 75 200 -65~200 V A A A W ℃ ℃ Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 2.33 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter sustaining voltage 2N6298 IC=0.1A ; IB=0 2N6299 IC=4A; IB=16mA IC=8A; IB=80mA IC=8A; IB=80mA IC=4A ; VCE=3V 2N6298 ICEX Collector cut-off current 2N6299 2N6298 ICEO Collector cut-off current 2N6299 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance VCE=40V; IB=0 VEB=5V; IC=0 IC=4A ; VCE=3V IC=8A ; VCE=3V IE=0 ; VCB=10V;f=0.1MHz VCE=60V; VBE(off)=1.5V TC=150℃ VCE=80V; VBE(off)=1.5V TC=150℃ VCE=30V; IB=0 CONDITIONS 2N6298 2N6299 MIN 60 TYP. MAX UNIT VCEO(SUS) V 80 2.0 3.0 4.0 2.8 0.5 5.0 0.5 5.0 0.5 V V V V VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter on voltage mA mA 2.0 750 100 300 18000 mA pF JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE 2N6298 2N6299 Fig.2 Outline dimensions JMnic