2N6420

JMnic Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Continuous collector current-IC=-1A ・Power dissipation -PD=35W @TC=25℃ ・Complement to type 2N3583 APPLICATIONS ・High speed switching and linear amplifier ・High-voltage operational amplifiers ・Switching regulators ,converters ・Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6420 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -250 -175 -6 -1.0 -5.0 -1.0 35 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT ℃/W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N6420 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-50mA ; IB=0 -175 V VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.125A -5.0 V VBE Base -emitter on voltage IC=-1A ; VCE=-10V VCE=-225V;VBE(off)=-1.5V TC=150℃ VCE=-150V IB=0 -1.4 -1.0 -3.0 -10 V ICEX Collector cut-off current mA ICEO Collector cut-off current mA IEBO Emitter cut-off current VEB=-6V; IC=0 -5.0 mA hFE-1 DC current gain IC=-0.1A ; VCE=-10V 40 hFE-2 DC current gain IC=-0.5A ; VCE=-10V 40 200 hFE-3 DC current gain IC=-1A ; VCE=-10V 10 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6420 Fig.2 Outline dimensions 3