2N6490

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6490 DESCRIPTION ・With TO-220 package ・Complement to type 2N6487 APPLICATIONS ・It is intended for use in power linear and low frequency switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 70 60 5 15 5 75 150 -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6490 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE-1 VBE-2 ICEO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustioning voltage Collector-emitter saturation voltge Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ;IB=0 IC=5A IB=0.5A IC=15A IB=5A IC=5A ; VCE=4V IC=15A ; VCE=4V VCE=30V; IB=0 VEB=5V; IC=0 IC=5A ; VCE=4V IC=15A ; VCE=4V 20 5 MIN 60 1.3 3.5 1.3 3.5 1 1 150 TYP. MAX UNIT V V V V V mA mA JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE 2N6490 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) JMnic