2N6654

JMnic Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage capability ・Fast switching speeds ・Low saturation voltage APPLICATIONS ・Switcing regulators ・Inverters ・Solenoid and relay drivers ・Deflection circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2N6654 Fig.1 simplified outline (TO-3) and symbol Collector MAXIMUN RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature Tc=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 350 6 20 30 150 200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT ℃/W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N6654 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 350 V V(BR)CBO Collector-emitter breakdown voltage IC=1mA ; IE=0 500 V VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=2A 1.8 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=3A 2.2 V VBEsat Base-emitter saturation voltage IC=15A; IB=3A VCE=500V;VBE(off)=-1.5V TC=150℃ VEB=6V; IC=0 1.8 0.1 2.0 0.1 V ICEV Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1A ; VCE=5V 15 50 hFE -2 DC current gain IC=10A ; VCE=15V 10 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6654 Fig.2 Outline dimensions 3