2SA1021

JMnic Product Specification Silicon PNP Power Transistors 2SA1021 DESCRIPTION ・With TO-126 package ・High breakdown voltage ・Large current capacity APPLICATIONS ・For color TV sound output;converters Inverters applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -6 -1.5 -2.5 1.0 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA; RBE=∞ IC=-10μA; IE=0 IE=-10μA ; IC=0 IC=-500mA; IB=-50mA IC=-500mA; IB=-50mA VCB=-120V; IE=0 VEB=-4V; IC=0 IC=-150mA ; VCE=-5V IC=-50mA ; VCE=-10V 60 15 MIN 2SA1021 TYP. -150 -150 -6 MAX UNIT V V V -0.5 -1.2 -1.0 -1.0 320 V V μA μA MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1021 Fig.2 Outline dimensions 3