2SA1129

JMnic Product Specification Silicon PNP Power Transistors 2SA1129 DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Large current capacity ・Complement to type 2SC2654 APPLICATIONS ・For low-frequency power amplifiers and mid-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25℃ PT Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 1.5 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -30 -30 -7 -7 -15 -3.5 40 W UNIT V V V A A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat-1 VCEsat -2 VBEsat-1 VBEsat -2 ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA ,IB=0 IC=-3A; IB=-0.1A IC=-5A; IB=-0.5A IC=-3A; IB=-0.1A IC=-5A; IB=-0.5A VCB=-30V; IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-1V IC=-5A ; VCE=-1V 40 20 MIN -30 TYP. 2SA1129 MAX UNIT V -0.3 -0.6 -1.5 -2.0 -10 -10 200 V V V V μA μA Switching times resistive load ton tstg tf Turn-on time Storage time Fall time IC=-5.0A IB1=- IB2=-0.5A RL=4Ω;VCC=-20V 1.0 2.5 1.0 μs μs μs hFE-1 Classifications M 40-80 L 60-120 K 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1129 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3