2SA1220

JMnic Product Specification Silicon PNP Power Transistors 2SA1220 2SA1220A DESCRIPTION ・With TO-126 package ・Complement to type 2SC2690/2690A APPLICATIONS ・Audio frequency power amplifier ・High frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SA1220 VCBO Collector-base voltage 2SA1220A 2SA1220 VCEO Collector-emitter voltage 2SA1220A VEBO IC ICM IB Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -55～+150 ℃ ℃ Open collector Open base -160 -5 -1.2 -2.5 -0.3 1.2 W V A A A Open emitter -160 -120 V CONDITIONS VALUE -120 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-1A; IB=-0.2A IC=-1A ;IB=-0.2A VCB=-120V; IE=0 VEB=-3V; IC=0 IC=-5mA ; VCE=-5V IC=-0.3A ; VCE=-5V IE=0 ; VCB=-10V f=1MHz IC=-0.2A ; VCE=5V 2SA1220 2SA1220A MIN TYP. MAX -0.7 -1.3 -1 -1 UNIT V V μA μA 35 60 26 175 320 pF MHz hFE-2 Classifications R 60-120 Q 100-200 P 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1220 2SA1220A Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1220 2SA1220A 4