JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・High breadown voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION
2SA1250
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO
Collector-base voltage
Open emitter
-200
V
VCEO
Collector-emitter voltage
Open base
-200
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current TC=25℃
-8
A
PD
Total power dissipation
30
W ℃ ℃
Tj Tstg
Junction temperature
150
Storage temperature
-55~150
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SA1250
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
-200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-7
V
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.0
V
ICBO
Collector cut-off current
VCB=200V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-10
μA
hFE-1
DC current gain
IC=-2A ; VCE=-1V
40
200
hFE-2
DC current gain
IC=-5A ; VCE=-1V
20
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1250
Fig.2 outline dimensions
3
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