2SA1386A

JMnic Product Specification Silicon PNP Power Transistors 2SA1386 2SA1386A DESCRIPTION ・With TO-3PN package ・Complement to type 2SC3519/3519A APPLICATIONS ・Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2SA1386 VCBO Collector-base voltage 2SA1386A 2SA1386 VCEO Collector-emitter voltage 2SA1386A VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -180 -5 -15 -4 130 150 -55~150 V A A W ℃ ℃ Open emitter -180 -160 V CONDITIONS VALUE -160 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA1386 IC=-25mA ;IB=0 2SA1386A VCEsat Collector-emitter saturation voltage 2SA1386 2SA1386A IEBO hFE Cob fT Emitter cut-off current DC current gain Output capacitance Transition frequency IC=-5A; IB=-0.5A VCB=-160V; IE=0 CONDITIONS 2SA1386 2SA1386A MIN -160 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -180 -2.0 V ICBO Collector cut-off Current -100 VCB=-180V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IE=0 ; VCB=10V;f=1MHz IC=-2A ; VCE=-12V 50 500 40 -100 180 μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A;RL=4Ω IB1=-IB2=-1A VCC=40V 0.30 0.70 0.20 μs μs μs hFE Classifications O 50-100 P 70-140 Y 90-180 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1386 2SA1386A Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1386 2SA1386A 固 体 半导 电 GE S HAN INC OND EMIC TOR UC 4