2SA1396

JMnic Product Specification Silicon PNP Power Transistors 2SA1396 DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3568 ・Low collector saturation voltage ・High switching speed APPLICATIONS ・Switching regulator ・DC-DC converter ・High frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulse) Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -10 -20 -5 30 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors 2SA1396 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICER ICEX IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=-5A;IB=-0.5A;L=1mH IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-100V; IE=0 VCE=-100V; RBE=51Ω; Ta=125℃ VCE=-100V;VBE(off)=1.5V Ta=125℃ VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-5A ; VCE=-5V 40 40 20 MIN -100 -0.6 -1.5 -10 -1 -0.01 -1 -10 200 200 TYP. MAX UNIT V V V μA mA mA μA Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A ;IB1=-IB2=-0. 5A VCC≈50V;RL=10Ω 0.5 1.5 0.5 μs μs μs hFE-2 Classifications M 40-80 L 60-120 K 100-200 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1396 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1396 4