2SA1470

JMnic Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC3747 ・Low saturation voltage ・Fast switching time APPLICATIONS ・Inductance,lamp drivers ・Inverters ,converters ・Power amplification ・High-speed switching PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SA1470 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -60 -5 -7 -10 2 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=∞ IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3.5A IB=-0.175A VCB=-40V IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-1A ; VCE=-5V 70 100 MIN -60 -80 -5 TYP. 2SA1470 MAX UNIT V V V -0.4 -0.1 -0.1 280 V mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-3.0A;IB1=-IB2=-0.15A VCC=20V ,RL=6.67Ω 0.1 0.5 0.1 μs μs μs hFE Classifications Q 70-140 R 100-200 S 140-280 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1470 Fig.2 Outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1470 4