2SA679

JMnic Product Specification Silicon PNP Power Transistors 2SA679 2SA680 DESCRIPTION ・With TO-3 package ・Complement to type 2SC1079/1080 ・High power dissipation APPLICATIONS ・For audio power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2SA679 VCBO Collector-base voltage 2SA680 2SA679 VCEO Collector-emitter voltage 2SA680 VEBO IC IE PC Tj Tstg Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -100 -5 -12 12 100 150 -65~150 V A A W ℃ ℃ Open emitter -100 -120 V CONDITIONS VALUE -120 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA679 V(BR)CEO Collector-emitter breakdown voltage 2SA680 V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IE=-10mA ;IC=0 IC=-10A; IB=-1A IC=-10A ; VCE=-5V VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-5V IC=-7A ; VCE=-5V IE=0 ; VCB=-10V; f=1.0MHz IC=-2A ; VCE=-5V IC=-0.1A ;IB=0 CONDITIONS 2SA679 2SA680 MIN -120 TYP. MAX UNIT V -100 -5 -3.0 -2.5 -0.1 -0.1 40 15 900 6 pF MHz 140 V V V mA mA hFE-1 Classifications R 40-80 Y 70-140 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA679 2SA680 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3