2SA699

JMnic Product Specification Silicon PNP Power Transistors 2SA699 2SA699A DESCRIPTION ・With TO-202 package ・Complement to type 2SC1226/1226A APPLICATIONS ・Power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SA699 VCBO Collector-base voltage 2SA699A 2SA699 VCEO Collector-emitter voltage 2SA699A VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -40 -5 -2 -3 -0.6 10 150 -55~150 V A A A W ℃ ℃ Open emitter -50 -32 V CONDITIONS VALUE -40 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage 2SA699 IC=-1mA;IE=0 2SA699A 2SA699 IC=-10mA; IB=0 2SA699A ICBO ICEO IEBO hFE COB fT Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency VCB=-20V; IE=0 VCE=-12V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IE=0; VCB=-5V;f=1MHz IE=0.5A ; VCB=-5V CONDITIONS IC=-1.5A ;IB=-0.15A IC=-2A ;IB=-0.2 A 2SA699 2SA699A MIN TYP. -0.4 MAX -1.0 -1.5 UNIT V V V(BR)CBO Collector-base breakdown voltage -40 V -50 -32 V -40 -1 -100 -100 50 70 150 220 pF MHz μA μA μA V(BR)CEO Collector-emitter breakdown voltage hFE classifications P 50-100 Q 80-160 R 100-220 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA699 2SA699A Fig.2 outline dimensions 3 JMnic Product Specification Silicon PNP Power Transistors 2SA699 2SA699A 4 JMnic Product Specification Silicon PNP Power Transistors 2SA699 2SA699A 5