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2SA738

2SA738

  • 厂商:

    JMNIC

  • 封装:

  • 描述:

    2SA738 - Silicon PNP Power Transistors - Quanzhou Jinmei Electronic Co.,Ltd.

  • 数据手册
  • 价格&库存
2SA738 数据手册
JMnic Product Specification Silicon PNP Power Transistors 2SA738 DESCRIPTION ・With TO-126 package ・High current ・Complement to type 2SC1368 APPLICATIONS ・Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM Pt Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -25 -25 -5 -1.5 -2.0 8 150 -65~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA738 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -25 V VCEsat VBE Collector-emitter saturation voltage IC=-0.5A; IB=-50mA IC=-500mA ; VCE=-2V -0.5 V Base-emitter voltage -1.0 V μA μA ICBO Collector cut-off current VCB=-25V; IE=0 -1.0 IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 hFE-1 DC current gain IC=-150mA ; VCE=-2V 35 320 hFE-2 DC current gain IC=-500mA ; VCE=-2V 25 fT Transition frequency IC=-50mA; VCE=-5V 160 MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA738 Fig.2 Outline dimensions 3
2SA738 价格&库存

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