JMnic
Product Specification
Silicon PNP Power Transistors
2SA738
DESCRIPTION ・With TO-126 package ・High current ・Complement to type 2SC1368 APPLICATIONS ・Driver stages in high-fidelity amplifiers and television circuits
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
・
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM Pt Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -25 -25 -5 -1.5 -2.0 8 150 -65~150 UNIT V V V A A W ℃ ℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SA738
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
-25
V
VCEsat VBE
Collector-emitter saturation voltage
IC=-0.5A; IB=-50mA IC=-500mA ; VCE=-2V
-0.5
V
Base-emitter voltage
-1.0
V μA μA
ICBO
Collector cut-off current
VCB=-25V; IE=0
-1.0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
hFE-1
DC current gain
IC=-150mA ; VCE=-2V
35
320
hFE-2
DC current gain
IC=-500mA ; VCE=-2V
25
fT
Transition frequency
IC=-50mA; VCE=-5V
160
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA738
Fig.2 Outline dimensions
3
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