2SA794

JMnic Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION ・With TO-126 package ・Complement to type 2SC1567/1567A ・High collector-emitter voltage VCEO APPLICATIONS ・For low frequency output driver ・Optimum for the driver stage of low frequency and 40W to 100W output amplifier PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SA794 VCBO Collector-base voltage 2SA794A 2SA794 VCEO Collector- emitter voltage 2SA794A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -120 -5 -0.5 -1 1.2* 150 -55~+150 V A A W ℃ ℃ Open emitter -120 -100 V CONDITIONS VALUE -100 V UNIT *Without heat sink JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA794 V(BR)CEO Collector-emitter breakdown voltage 2SA794A V(BR)EBO VCEsat VBEsat hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Collector output capacitance Transition frequency IE=-1μA ;IC=0 IC=-500mA ;IB=-50mA IC=-500mA ;IB=-50mA IC=-150mA ; VCE=-10V IC=-500mA ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz VCB=-10V;IE=50mA;f=200MHz IC=-100μA ;IB=0 CONDITIONS 2SA794 2SA794A MIN -100 TYP. MAX UNIT V -120 -5 -0.2 -0.85 90 50 20 120 pF MHz -0.4 -1.2 220 V V V hFE-1 Classifications Q 90-155 R 130-220 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA794 2SA794A Fig.2 Outline dimensions 3