2SA878

JMnic Product Specification Silicon PNP Power Transistors 2SA877 2SA878 DESCRIPTION ・With TO-3 package ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2SA877 VCBO Collector-base voltage 2SA878 2SA877 VCEO Collector-emitter voltage 2SA878 VEBO IC PC Tj Tstg Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -120 -6 -10 100 150 -55~150 V A W ℃ ℃ Open emitter -120 -80 V CONDITIONS VALUE -80 V UNIT JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA877 V(BR)CEO Collector-emitter breakdown voltage 2SA878 V(BR)EBO VCEsat Emitter-base breakdown voltage Collector-emitter saturation voltage 2SA877 ICBO Collector cut-off current 2SA878 IEBO hFE COB fT Emitter cut-off current DC current gain Output capacitance Transition frequency VCB=-120V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IE=0 ; VCB=-10V; f=1.0MHz IC=-1A ; VCE=-12V IE=-1mA ;IC=0 IC=-5A; IB=-0.5A VCB=-80V; IE=0 IC=-0.1A ;IB=0 CONDITIONS 2SA877 2SA878 MIN -80 TYP. MAX UNIT V -120 -6 -2.0 V V -0.1 mA -0.1 50 255 15 mA pF MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA877 2SA878 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3