2SA940

JMnic Product Specification Silicon PNP Power Transistors 2SA940 DESCRIPTION ・With TO-220 package ・Complement to type 2SC2073 APPLICATIONS ・Power amplifier applications ・Vertical output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -1.5 -0.5 1.5 W UNIT V V V A A JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE COB fT PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-0.5A; IB=-50m A IC=-0.5A ; VCE=-10V IC=-1mA; IE=0 IC=-5mA; IB=0 IE=-1mA; IC=0 VCB=-120V;IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-10V IE=0; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-10V 40 55 4 -150 -150 -5 -0.75 MIN TYP. 2SA940 MAX -1.5 -0.85 UNIT V V V V V -10 -10 140 μA μA pF MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA940 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SA940 4