2SB507

JMnic Product Specification Silicon PNP Power Transistors 2SB507 DESCRIPTION ・With TO-220C package ・Complement to type 2SD313 ・Low collector saturation voltage APPLICATIONS ・Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -5 -3 -6 -1 30 150 -50~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case MAX 4.16 UNIT ℃/W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-2A; IB=-0.2A IC=-1A ; VCE=-2V VCB=-60V; IE=0 VCE=-60V; IB=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-0.1A ; VCE=-2V IC=-0.5A ; VCE=-5V 40 40 5 MIN -60 TYP. 2SB507 MAX UNIT V -1.0 -1.5 -0.1 -5.0 -1.0 320 V V mA mA mA MHz hFE-1 Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB507 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3