2SB757

JMnic Product Specification Silicon PNP Power Transistors 2SB757 DESCRIPTION ・With TO-3PN package ・High collector current ・Wide area of safe operation ・Complement to type 2SD847 APPLICATIONS ・Audio amplifications ・Serie regulators ・General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -40 -40 -5 -15 -5 80 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.56 UNIT ℃/W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB757 MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-0.1mA; IE=0 -40 V V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -40 V V(BR)EBO Emitter-base breakdown voltage IE=-0.1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.8 V VBEsat Base-emitter on voltage IC=-5A; IB=-0.5A -1.8 V μA μA ICBO Collector cut-off current VCB=-40V; IE=0 -10 IEBO Emitter cut-off current VEB=-5V; IC=0 -100 hFE DC current gain IC=-5A ; VCE=-2V 40 240 Switching times μs μs μs ton Turn-on time IC=-15A;IB1=-IB2=-1.5A RL=2Ω;PW=20μs,Duty≤2% 1.0 ts Storage time 2.0 tf Fall time 1.0 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB757 Fig.2 outline dimensions 3