2SC2238A

JMnic Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION ・With TO-220 package ・Complement to type 2SA968 ・High breakdown votage APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 固 体 半导 电 VCBO CHA IN Emitter-base voltage Collector current Emitter current Collector-base voltage GE S N 2SC2238A 2SC2238B 2SC2238 2SC2238A 2SC2238B 2SC2238 OND EMIC CONDITIONS Open emitter Open base TOR UC VALUE 160 180 200 160 180 200 UNIT V VCEO Collector-emitter voltage V VEBO IC IE PT Tj Tstg Open collector 5 1.5 -1.5 V A A W ℃ ℃ Total power dissipation Junction temperature Storage temperature TC=25℃ 25 150 -55~150 JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SC2238 V(BR)CEO Collector-emitter breakdown voltage 2SC2238A 2SC2238B V(BR)EBO VCEsat VBE ICBO IEBO hFE Cob fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current 2SC2238 2SC2238A 2SC2238B CONDITIONS MIN 160 TYP. MAX UNIT IC=10mA; IB=0 180 200 V IE=1mA; IC=0 IC=500A; IB=50mA IC=500mA ; VCE=5V VCB=160V ;IE=0 VEB=5V; IC=0 IC=100mA ; VCE=5V 5 1.5 1.0 1.0 1.0 V V V μA μA 固 DC current gain 体 半导 电 Output capacitance Transition frequency hFE Classifications O 70-140 Y INC GE S HAN IE=0 ; VCB=10V,f=1MHz IC=100mA ; VCE=10V OND EMIC 70 TOR UC 240 25 100 pF MHz 120-240 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2238 2SC2238A 2SC2238B 固 体 半导 电 GE S HAN INC OND EMIC TOR UC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3