2SC2438

JMnic Product Specification Silicon NPN Power Transistors 2SC2438 DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 150 80 7 7 2 50 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT ℃/W JMnic Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2438 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 IC=100μA ; IE=0 IE=100μA ; IC=0 80 V V(BR)CBO Collector-base breakdown voltage 150 V V(BR)EBO Emitter-base breakdown voltage 7 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A 0.5 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.4A 1.2 V μA μA ICBO Collector cut-off current VCB=150V ;IE=0 100 IEBO Emitter cut-off current VEB=7V; IC=0 100 hFE DC current gain IC=4 A ; VCE=1V 30 Switching times μs μs μs ton Turn-on time IC=4A; IB1=0.4A IB2=-0.4A;RL=5Ω 0.5 ts Storage time 2.5 tf Fall time 0.3 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2438 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC2438 4