2SC2485

Product Specification www.jmnic.com Silicon Power Transistors 2SC2485 DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1061 ・High collector power dissipation APPLICATIONS ・High power audio frequency amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION LIMITING VALUES SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector MAX 100 100 5 6 10 70 150 -55~150 UNIT V V V A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon Power Transistors 2SC2485 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Emitter-base on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IC=4A IB=0.4A IC=4A;VCE=5V VCB=100V IE=0 VEB=3V; IC=0 IC=0.2A ; VCE=5V IC=1A ; VCE=5V IC=4A ; VCE=5V IC=0.5A ; VCE=5V 20 40 20 20 MHz 200 MIN 100 2.0 1.8 50 50 TYP. MAX UNIT V V V μA μA hFE-2 Classifications R 40-80 Q 60-120 P 100-200 JMnic Product Specification www.jmnic.com Silicon Power Transistors PACKAGE OUTLINE 2SC2485 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic