2SC3873

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3873 DESCRIPTION ・With TO-3PFa package ・High VCBO ・High speed switching ・Good linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 3 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 12 22 5 100 W UNIT V V V A A A JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3873 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA;IB=0 IC=7A ;IB=1.4A IC=7A ;IB=1.4A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=7A ; VCE=5V IC=0.5A ; VCE=10V 15 8 30 MHz MIN 400 1.0 1.5 100 100 TYP. MAX UNIT V V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=7A; VCC=150V IB1=1.4A;IB2=-2.8A 0.7 2.0 0.3 μs μs μs JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3873 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) JMnic