2SC4706

JMnic Product Specification Silicon NPN Power Transistors 2SC4706 DESCRIPTION ・With TO-3PN package ・High voltage switching transistor APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 900 600 7 14 28 7 130 150 -55~150 UNIT V V V A A A W ℃ ℃ JMnic Product Specification Silicon NPN Power Transistors 2SC4706 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO ICBO IEBO hFE VCE(sat) VBE(sat) fT COB PARAMETER Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance CONDITIONS IC=10mA ; IB=0 VCB=800V; IE=0 VEB=7V; IC=0 IC=7A ; VCE=4V IC=7A ; IB=1.4A IC=7A ; IB=1.4A VCE=12V;IE=-1.5A VCB=10V;f=1MHz 6 160 10 MIN 600 0.1 0.1 25 0.5 1.2 V V MHz pF TYP. MAX UNIT V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=7A;RL=35.7Ω IB1=1.05A;IB2=-3.5A VCC=250V 1.0 5.0 0.7 μs μs μs 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4706 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 JMnic Product Specification Silicon NPN Power Transistors 2SC4706 4