2SD1441

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1441 DESCRIPTION ・With TO-3PN package ・Built-in damper diode ・High voltage ,high reliability ・High speed switching ・Wide area of safe operation APPLICATIONS ・For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VEBO IC ICM IBM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open collector VALUE 1500 5 4 15 3.5 70 130 -55~130 UNIT V V A A A W ℃ ℃ JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VEBO VCEsat VBEsat PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IE=500mA; IC=0 IC=3A; IB=1A IC=3A; IB=1A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE ts tf VF DC current gain Storage time Fall time Diode forward voltage IC=3A ; VCE=10V 5 4 MIN 5 TYP. 2SD1441 MAX UNIT V 1.0 1.5 50 1 15 9 0.8 2.2 V V μA mA IC=3A IBend=1A,LLeak=5μH μs μs V IF=-4A,IB=0 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1441 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) JMnic