TANCERAM CHIP CAPACITORS
®
TANCERAM® chip capacitors can replace tantalum capacitors
in many applications and offer several key advantages over
traditional tantalums. Because TANCERAM® capacitors exhibit
extremely low ESR, equivalent circuit performance can often be
achieved using considerably lower capacitance values. Low
DC leakage reduces current drain, extending the battery life of
portable products. TANCERAM® high DC breakdown voltage
ratings offer improved reliability and eliminate large voltage
de-rating common when designing with tantalums.
ADVANTAGES
• Low ESR
• Low DC Leakage
• Higher Surge Voltage
• Non-polarized Devices
• Reduced CHIP Size
• Improved Reliability
• Higher Insulation Resistance • Higher Ripple Current
APPLICATIONS
• Switching Power Supply Smoothing (Input/Output)
• Backlighting Inverters
• DC/DC Converter Smoothing (Input/Output)
• General Digital Circuits
HOW TO ORDER TANCERAM®
16
Part number written: 100R15X106MV4E
100
R15
X
106
M
V
4
E
VOLTAGE
SIZE
DIELECTRIC
CAPACITANCE
TOLERANCE
TERMINATION
MARKING
PACKING
6R3 = 6.3 V
100 = 10 V
160 = 16 V
250 = 25 V
500 = 50 V
101 = 100 V
See Chart
W = X7R
X = X5R
1st two digits are
significant; third digit
denotes number of
zeros.
105 = 1.00 µF
476 = 47.0 µF
107 = 100 µF
K = ±10%
M = ±20%
V = Nickel Barrier
with 100% Tin
Plating (Matte)
4 = Unmarked
Code Type Reel
E
Plastic 7”
T
Paper 7”
Tape specifications
conform to EIA
RS481
T = SnPb*
(*available on
select parts)
www.johanson dielectrics.com
DIELECTRIC
TANCERAM CHIP CAPACITORS
®
INCHES
(mm)
0201
R05
L
W
T
EB
.024 ±.001
.011 ±.001
.013 Max.
.004 Min.
(0.60 ±.03)
(0.28 ±.03)
(0.33 Max.)
(0.10 Min.)
0402
R07
L
W
T
EB
.039 ±.002
.020 ±.002
.022 Max.
.002 Min.
(0.99 ±.05)
(0.51 ±.05)
(0.55 Max.)
(0.05 Min.)
VDC
1.0 µF
Dielectric W
10
6.3
4
35
25
16
10
6.3
X
L
T
E/B
X (X5R)
CAPACITANCE SELECTION
EIA / JDI
W
W (X7R)
1.5 µF
2.2 µF
3.3 µF
4.7 µF
10 µF
22 µF
47 µF 100 µF 220 µF
W
W
W
W
W
W
W
X
X
X
X
X
X
X
X
X
4
50
35
25
16
10
6.3
50
35
25
16
10
6.3
4
50
35
25
16
10
6.3
50
35
25
16
10
6.3
0603
R14
L
W
T
EB
.063 ±.004
.031 ±.004
.037 Max.
.006 Min.
(1.60 ±.10)
(0.79 ±.10)
(0.93 Max.)
(0.15 Min.)
0805
R15
L
W
T
EB
.079 ±.012
.049 ±.008
.057 Max.
.008 Min.
(2.01 ±.30)
(1.24 ±.20)
(1.44 Max.)
(0.20 Min.)
1206
R18
L
W
T
EB
.126 ±.012
.063 ±.008
.071 Max.
.010 Min.
(3.20 ±.30)
(1.60 ±.20)
(1.80)
(0.25 Min.)
1210
S41
L
W
T
EB
.126 ±.012
.098 ±.012
.106 Max.
.012 Min.
(3.20 ±.30)
(2.49 ±.30)
(2.69 Max.)
(0.30 Min.)
1812
S43
L
W
T
EB
.177 ±.016
.126 ±.012
.118 Max.
.012 Min.
(4.50 ±.41)
(3.20 ±.30)
(2.99 Max.)
(0.30 Min.)
50
2220
S47
L
W
T
EB
.220 ±.016
.197 ±.016
.118 Max.
.012 Min.
(5.59 ±.41)
(3.20 ±.30)
(2.99 Max.)
(0.30 Min.)
50
25
25
“K” OR “M” TOLERANCE, 0201 ONLY AVALIABLE IN M
ONLY “M” TOLERANCE
ELECTRICAL CHARACTERISTICS
DIELECTRIC:
X7R
TEMPERATURE COEFFICIENT:
DISSIPATION FACTOR:
INSULATION RESISTANCE (MIN. @ 25°C, WVDC)
DIELECTRIC STRENGTH:
TEST CONDITIONS:
OTHER:
X5R
±15% (-55 to +125°C)
±15% (-55 to +85°C)
For ≥ 50 VDC: 5% max.
For ≤ 35 VDC: 10% max.
For ≥ 50 VDC: 5% max.
For ≤ 35 VDC: 10% max.
100 ΩF or 10 GΩ, whichever is less
2.5 X WVDC, 25°C, 50mA max.
Capacitance values ≤ 10 µF: 1.0kHz±50Hz @ 1.0±0.2 Vrms
Capacitance values > 10 µF: 120Hz±10Hz @ 0.5V±0.1 Vrms
See page 81 for additional dielectric specifications.
www.johanson dielectrics.com
17
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