SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
B
2N3904
EPITAXIAL PLANAR NPN TRANSISTOR
C
Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) @VCE=30V, VEB=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. Low Collector Output Capacitance : Cob=4pF(Max.) @VCB=5V. Complementary to 2N3906.
L M
1 2 3 F
H
A
FEATURES
N K D G E
F
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25
)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 60 40 6 200 50 625 1.5 150 -55 150 UNIT V V V mA mA mW W
TO-92
2002. 9. 12
Revision No : 1
1/4
2N3904
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Base Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage SYMBOL ICEX IBL V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(2) DC Current Gain * hFE(3) hFE(4) hFE(5) Collector-Emitter Saturation Voltage * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hie hre hfe hoe NF VCE=5V, IC=0.1mA Rg=1k f=10Hz 15.7kHz
Vout V in 275Ω
TEST CONDITION VCE=30V, VEB=3V VCE=30V, VEB=3V IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=20V, IC=10mA, f=100MHz VCB=5V, IE=0, f=1MHz VBE=0.5V, IC=0, f=1MHz
MIN. 60 40 6.0 40 70 100 60 30 0.65 300 1.0
TYP. -
MAX. 50 50 300 0.2
UNIT nA nA V V V
V 0.3 0.85 V 0.95 4.0 8.0 10 8.0 400 40 5.0 dB MHz pF pF k x10-4
Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Collector Output Admittance Noise Figure
*
VCE=10V, IC=1mA, f=1kHz
0.5 100 1.0 , -
Delay Time
td
10kΩ
C Total< 4pF
-
-
35
300ns
Rise Time Switching Time
tr
10.9V -0.5V
VCC =3.0V 0 t r ,t f < 1ns, Du=2% Vout
-
-
35 nS
V in
275Ω
Storage Time
tstg
10kΩ 1N916 or equiv.
C Total< 4pF
-
-
200
Fall Time
tf
20µs 10.9V -9.1V
VCC =3.0V 0 t r ,t f < 1ns, Du=2%
-
-
50
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
2002. 9. 12
Revision No : 1
2/4
2N3904
I C - V CE
COLLECTOR CURRENT I C (mA) 100 80 60 40 20 0
I B =0.1mA COMMON EMITTER Ta=25 C 1
0.9 0.8 0.7 0.6 0.5
h FE - I C
1k DC CURRENT GAIN h FE 500 300
Ta=125 C Ta=25 C COMMON EMITTER VCE =1V
0.4 0.3 0.2
100 50 30
Ta=-55 C
0
1
2
3
4
10
0.1
0.3
1
3
10
30
100
300
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (mA)
V BE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 5 3
Ta=-55 C COMMON EMITTER I C /I E =10
VCE(sat) - I C
1 0.5 0.3
COMMON EMITTER I C /I B =10
1 0.5 0.3
0.1 0.05 0.03
Ta=125 C Ta=25 C Ta=-55 C
Ta=25 C Ta=125 C
0.1 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA)
0.01
0.1
0.3
1
3
10
30
100
300
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
I C - VBE
COLLECTOR CURRENT I C (mA) 200 160 120
Ta= 125 C Ta= 25 C Ta=5 5C
VCE - I B
1.0 0.8 0.6 0.4 0.2
IC =1mA IC =10mA I C =30mA I C =100mA
COMMON EMITTER VCE =1V
80 40 0
0
0.4
0.8
1.2
1.6
0 0.001
COMMON EMITTER Ta=25 C
0.01
0.1
1
10
BASE-EMITTER VOLTAGE VBE (V)
BASE CURRENT I B (mA)
2002. 9. 12
Revision No : 1
3/4
2N3904
COLLECTOR POWER DISSIPATION PC (mW)
Cob - VCB , C ib - VEB
50 30 CAPACITANCE Cob (pF) C ib (pF)
f=1MHz Ta=25 C
Pc - Ta
700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175
10 5 3
C ib C ob
1 0.5 0.1 0.3 1 3 10 30
REVERSE VOLTAGE V CB (V) V EB (V)
AMBIENT TEMPERATURE Ta ( C)
2002. 9. 12
Revision No : 1
4/4
很抱歉,暂时无法提供与“2N3904_02”相匹配的价格&库存,您可以联系我们找货
免费人工找货