2N7002K

SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. A G L 2N7002K N Channel MOSFET ESD Protected 2000V E B L DIM A D B C D E G H J K L M N P MILLIMETERS _ 2.93+ 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 Rugged and reliable. High saturation current capablity. 2 3 H 1 P P CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed (Note 1) SYMBOL VDSS VGSS ID IDP PD Tj Tstg 1% RATING 60 20 300 UNIT V M 1. SOURCE V mA 2. GATE 3. DRAIN 1200 300 150 -55 150 mW Drain Power Dissipation (Note 2) Junction Temperature Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle K SOT-23 Note 2) Package mounted on a glass epoxy PCB(100mm2 1mm) EQUIVALENT CIRCUIT D Marking Lot No. G Type Name WC S ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse ) TEST CONDITION VGS=0V, ID=10 A VDS=60V, VGS=0V VGS=20V, VDS=0V VGS=-20V, VDS=0V MIN. 60 TYP. MAX. 1 10 -10 UNIT V A A A SYMBOL BVDSS IDSS IGSSF IGSSR 2009. 11. 17 Revision No : 2 J MAXIMUM RATING (Ta=25 ) C N 1/4 2N7002K ELECTRICAL CHARACTERISTICS (Ta=25 ) ON CHARACTERISTICS (Note 3) CHARACTERISTIC Gate Threshold Voltage Drain-Source ON Resistance SYMBOL Vth RDS(ON) TEST CONDITION VDS=VGS, ID=250 A VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, VDS= 2 VDS(ON) VDS=10V, ID=500mA VGS=0V, IS=200mA (Note1) MIN. 1.1 500 200 TYP. 1.2 1.5 0.6 0.075 580 760 MAX. 2.35 1.8 2.1 0.9 V 0.105 1150 mA mS mV UNIT V Drain-Source ON Voltage On State Drain Current Forward Transconductance Drain-Source Diode Forward Voltage Note 3) Pulse Test : Pulse Width 80 VDS(ON) ID(ON) gFS VSD , Duty Cycle 1% DYNAMIC CHARACTERISTICS CHARACTERISTIC Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Time Switching Time Turn-Off Time SYMBOL Ciss Crss Coss ton toff VDD=30V, RL=155 , ID=190mA, VGS=10V VDS=25V, VGS=0V, f=1MHz TEST CONDITION MIN. TYP. 52.1 3.9 7.7 11.1 22.5 MAX. nS pF UNIT SWITCHING TIME TEST CIRCUIT ton VDD RL td(off) td(on) tr 90% toff tf 90% VIN D VOUT OUTPUT VGS G VOUT 10% INVERTED 90% 50% S 50% INPUT VIN 10% PULSE WIDTH 2009. 11. 17 Revision No : 2 2/4 2N7002K DRAIN SOURCE ON - RESISTANCE RDS ( ) ID - VDS 1.5 COMMON SOURCE Ta = 25 C 10V 6V 5V RDS(ON) - ID 6.0 5.0 4.0 3.0 2.0 1.0 6V 7V 10V 4V 5V VGS = 3V COMMON SOURCE Ta = 25 C DRAIN CURRENT ID (A) 1.2 0.9 0.6 0.3 VGS = 3V 7V 4V 0.0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-CURRENT ID (A) RDS(ON) - Tj DRAIN SOURCE ON - RESISTANCE RDS ( ) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 VGS=10V ID=500mA VGS=5V ID=50mA Vth - Tj NORMALIZED GATE GATE SOURCE THRESHOLDVOLTAGE Vth (V) 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -100 -50 0 50 100 150 Common Source VGS=VDS ID=250 µA JUNCTION TEMPERATURE Tj ( C) JUNCTION TEMPERATURE Tj ( C) ID - VGS COMMON SOURCE VDS =10V I S - V SD REVERSE DRAIN CURRENT I S (A) 1 1.0 DRAIN CURRENT ID (A) 0.8 0.6 0.4 0.2 0.0 -55 C 25 C 125 C VGS=1V 0.1 VGS=0V 0 1 2 3 4 5 0.01 0.0 0.3 0.6 0.9 1.2 1.5 DRAIN-SOURCE VOLTAGE VGS (V) BODY DIODE FORWARD VOLTAGE VSD (V) 2009. 11. 17 Revision No : 2 3/4 2N7002K VGS - Q g GATE-SOURCE VOLTAGE VGS (V) 10 8 6 4 2 0 0 2 4 6 8 10 COMMON SOURCE VDS=30V ID=0.3A Ta=25 C C - V DS 1000 CAPACITANCE C (pF) COMMON SOURCE VGS =0V f=1MHz Ta=25 C C iss 100 C oss 10 C rss 1 0 5 10 15 20 25 GATE CHARGE Q g (nC) DRAIN-SOURCE VOLTAGE V DS (V) SOA DRAIN POWER DISSIPATION P D (mW) 10 DRAIN CURRENT I D (A) Tj=150 C , Ta=25 C ,Single Pulse,Package mounted 1 on a a glass epoxy PCB(100mm2 1mm) P D - Ta 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) PW 10 0.1 PW =1ms 0.01 0.001 0.0001 0.001 PW =10ms PW =100ms DC 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE V DS (V) 2009. 11. 17 Revision No : 2 4/4