BC338_00

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B BC338 EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA). For Complementary with PNP type BC328. K D E G N A High Current : IC=800mA. MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 30 25 5 800 -800 625 150 -55 150 UNIT F H F V L M V V mA mA mW 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification none:100 630, ) TEST CONDITION VCB=25V, IE=0 VCE=1V, IC=100mA IC=500mA, IB=50mA VCE=1V, IC=300mA VCE=5V, IC=-10mA, f=100MHz VCB=10V, f=1MHz, IE=0 25:160 400, 40:250 630 MIN. 100 TYP. 100 12 MAX. 100 630 0.7 1.2 V V MHz pF UNIT nA SYMBOL ICBO hFE VCE(sat) VBE(ON) fT Cob 16:100 250, 2000. 2. 28 Revision No : 2 1/2 BC338 2000. 2. 28 Revision No : 2 2/2