BC638

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT TRANSISTORS. B BC638 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES A Complementary to BC637. N K E G MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING -60 -60 -5 -500 625 150 -55 150 UNIT V V V mA mW L D H F F 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Input Capacitance Collector Output Capacitance ICBO ) TEST CONDITION VCB=-30V, IE=0 IC=-10mA, IB=0 IC=-100 A, IE=0 IE=-10 A, IC=0 VCE=-2V, IC=-150mA IC=-500mA, IB=-50mA VCE=-2V, IC=-500mA VCE=-2V, IC=-50mA, f=100MHz VEB=-0.5V, IC=0, f=1MHz VCB=-10V, IE=0, f=1MHz MIN. -60 -60 -5.0 -40 TYP. 150 50 9.0 MAX. -100 160 -0.5 -1.0 V V MHz pF pF UNIT nA V V V SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO hFE VCE(sat) VBE fT Cib Cob * Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% 2000. 10. 2 Revision No : 0 1/1