BC847

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . L BC846/7/8 EPITAXIAL PLANAR NPN TRANSISTOR E B L FEATURES High Voltage : BC846 VCEO=65V. A G For Complementary With PNP Type BC856/857/858. 2 3 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING 80 VCBO 50 30 65 VCEO 45 30 6 VEBO 6 5 IC IE PC * Tj Tstg 100 -100 350 150 Type Name P P UNIT DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N H BC846 Collector-Base Voltage BC847 BC848 BC846 Collector-Emitter Voltage BC847 BC848 BC846 Emitter-Base Voltage BC847 BC848 Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range M V 1. EMITTER 2. BASE 3. COLLECTOR V K SOT-23 V mA mA mW Marking Lot No. -55 150 0.6mm. PC* : Package Mounted On 99.5% Alumina 10 8 MARK SPEC TYPE MARK BC846A 1A BC846B 1B BC847A 1E BC847B 1F BC847C 1G BC848A 1J BC848B 1K BC848C 1L 2008. 8. 13 Revision No : 3 J D 1/3 BC846/7/8 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current BC846 DC Current Gain (Note) BC847 BC848 Collector-Emitter Saturation Voltage VCE(sat) 1 VCE(sat) 2 VBE(sat) 1 VBE(sat) 2 VBE(ON1) VBE(ON2) fT Cob NF IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA Rg=10k , f=1kHz hFE VCE=5V, IC=2mA SYMBOL ICBO TEST CONDITION VCB=30V, IE=0 MIN. 110 110 110 0.58 TYP. 0.09 0.2 0.7 0.9 300 2.5 1.0 MAX. 15 450 800 800 0.25 V 0.6 V 0.7 0.75 4.5 10 V V MHz pF dB UNIT nA Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Noise Figure NOTE : According to the value of hFE the BC846, BC847, BC848 are classified as follows. CLASSIFICATION BC846 hFE BC847 BC848 110 110 110 A 220 220 220 200 200 200 B 450 450 450 420 420 C 800 800 2008. 8. 13 Revision No : 3 2/3 BC846/7/8 I COLLECTOR CURRENT I C (mA) 100 80 60 40 20 0 0 4 C - V CE COLLECTOR CURRENT I C (mA) 100 50 30 10 5 3 1 0.5 0.3 0.1 VCE =5V I C - V BE I B =400µA I B =350µA I B =300µA I B =250µA I B =200µA I B =150µA I B =100µA I B =50µA 8 12 16 20 0.2 0.4 0.6 0.8 1.0 COLLECTOR-EMITTER VOLTAGE V CE (V) BASE-EMITTER VOLTAGE V BE (V) h FE - I C 1k V CE =5V VBE(sat) , V CE(sat) - I 10 SATURATION VOLTAGE V BE(sat) , V CE(sat) (V) 3 1 V BE(sat) I C /I B =20 C DC CURRENT GAIN h FE 500 300 100 50 30 0.3 0.1 0.03 0.01 V CE(sat) 10 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA) C ob - V CB 20 CAPACITANCE C ob (pF) f=1MHz I E =0 10 5 3 1 1 3 10 30 100 COLLECTOR-BASE VOLTAGE V CB (V) 2008. 8. 13 Revision No : 3 3/3