BC849_99

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES For Complementary With PNP Type BC859/860. 2 L BC849/850 EPITAXIAL PLANAR NPN TRANSISTOR E B L 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage ) SYMBOL RATING 30 50 30 45 5 100 350 150 -55 150 0.6mm. UNIT V C 1 BC849 BC850 BC849 BC850 VCBO VCEO VEBO IC PC * Tj Tstg P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G N H Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range V 1. EMITTER mA mW 2. BASE 3. COLLECTOR K Collector-Emitter Voltage V M SOT-23 PC* : Package Mounted On 99.5% Alumina 10 8 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Base-Emitter Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note : hFE Classification B:200 BC849 BC850 450, BC849 BC850 BC849 BC850 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE(Note) VBE(ON) 1 VBE(ON) 2 VCE(sat) 1 VCE(sat) 2 VBE(sat) 1 VBE(sat) 2 fT Cob NF C:420 800 TEST CONDITION IC=10mA, IB=0 IC=10 A, IE=0 IE=10 A, IC=0 VCB=30V, IE=0 IC=2mA, VCE=5V IC=2mA, VCE=5V IC=10mA, VCE=5V IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, VCE=5V, f=100MHz VCB=10V, IE=0, f=1MHz IC=200 A, VCE=5V Rg=10k , f=1kHz MIN. 30 45 30 50 5 200 0.58 TYP. 0.66 0.09 0.2 0.7 0.9 300 2.5 MAX. 15 800 0.7 0.77 0.25 0.6 4.5 4.0 1.0 V V V MHz pF dB UNIT V V V nA Emitter-Base Breakdown Voltage Marking J D MARK SPEC TYPE MARK BC849B 2B BC849C 2C BC850B 2F BC850C 2G Type Name Lot No. 1999. 11. 30 Revision No : 2 1/1