BCV71_02

SEMICONDUCT OR TECHNICAL DATA LOW LEVEL AUDIO-AMPLIFIER AND SWITCHING. BCV71/72, BCW71/72 EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Super Mini Packaged Transistor for Hybrid Circuits. For Complementary with PNP Type BCW69/70/89. L E B L 2 3 1 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range BCW71/72 BCV71/72 BCW71/72 BCV71/72 SYMBOL VCBO RATING 50 60 45 60 5 100 -100 200 150 -65～150 UNIT C N P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H VCEO VEBO IC IE PC Tj Tstg V V mA mA mW ℃ ℃ 1. EMITTER 2. BASE 3. COLLECTOR K V M SOT-23 MARK SPEC TYPE BCW71 BCW72 BCV71 BCV72 MARK K1 K2 K7 K8 Type Name Marking Lot No. 2002. 6. 18 Revision No : 2 J D 1/2 BCV71/72, BCW71/72 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage BCW71/72 BCV71/72 BCW71/72 BCV71/72 SYMBOL V(BR)CEO TEST CONDITION IC=2mA, IB=0 MIN. 45 60 50 60 5.0 110 200 550 TYP. 100 160 750 870 230 300 MAX. 100 10 220 450 700 250 4.0 10 mV mV UNIT V V(BR)CBO V(BR)EBO ICBO IC=10μ IE=0 A, IE=10μ IC=0 A, VCB=20V, IE=0 Ta=100℃, VCB=20V, IE=0 VCE=5V, IC=10μ A V V nA μ A Emitter-Base Breakdown Voltage Collector Cut-off Current BCV71/BCW71 DC Current Gain BCV72/BCW72 BCV71/BCW71 BCV72/BCW72 Base-Emitter Voltage Base-Emitter Saturation Voltage hFE VCE=5V, IC=2mA VBE(ON) VBE(sat) VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=50mA, IB=2.5mA IC=10mA, IB=0.5mA IC=50mA, IB=2.5mA IC=10mA, VCE=5V, f=100MHz VCB=10V, IE=0, f=1MHz IC=0.2mA, VCE=5V, Δf=200Hz Rg=2kΩ, f=1kHz Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure VCE(sat) fT Cob NF mV MHz pF dB 2002. 6. 18 Revision No : 2 2/2