BCW29_99

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BCW31/32 2 L BCW29/30 EPITAXIAL PLANAR PNP TRANSISTOR E B L 3 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC * Tj Tstg RATING -30 -20 -5 -100 350 150 -65 150 0.6mm. UNIT P P V C N V V mA mW M DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H 1. EMITTER 2. BASE 3. COLLECTOR K * : Package Mounted On 99.9% Alumina 10 8 SOT-23 Marking Lot No. Lot No. Type Name C1 BCW29 Type Name C2 BCW30 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current BCW29 DC Current Gain BCW30 Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Output Capacitance Noise Figure ) TEST CONDITION IC=-10 A IC=-2mA IE=-10 A VCB=-30V VEB=-5V VCE=-5V, IC=-2mA IC=-10mA, IB=-0.5mA VCE=-5V, IC=-2mA VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-0.2mA RS=2k , f=1kHz MIN. -30 -20 -5 110 200 -0.55 TYP. MAX. -100 -100 220 450 -0.25 -0.7 4 10 V V pF dB UNIT V V V nA nA SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(ON) Cob NF 1999. 12. 29 Revision No : 1 J D 1/1