BCW31_02

SEMICONDUCT OR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Complementary to BCW29/30. 2 L BCW31/32 EPITAXIAL PLANAR NPN TRANSISTOR E B L 3 1 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC * Tj Tstg RATING 30 20 5 100 350 150 -55～150 UNIT V V V mA mW ℃ ℃ C N M P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H 1. EMITTER 2. BASE 3. COLLECTOR K * : Package Mounted On 99.9% Alumina 10×8×0.6mm. SOT-23 Marking Lot No. Type Name Lot No. D1 BCW31 Type Name D2 BCW32 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain BCW31 BCW32 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(ON) Cob NF IC=10μ A IC=2mA IE=10μ A VCB=30V VEB=5V VCE=5V, IC=2mA IC=10mA, IB=0.5mA VCE=5V, IC=2mA VCB=10V, IE=0, f=1MHz VCE=5V, IC=0.2mA RS=2kΩ, f=1kHz TEST CONDITION MIN. 30 20 5 110 200 0.55 TYP. MAX. 100 100 220 450 0.25 0.7 4 10 V V pF dB UNIT V V V nA nA Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Output Capacitance Noise Figure 2002. 6. 18 Revision No : 2 J D 1/1