E30A2CPS

SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=30A. Reverse Voltage : 200V(Min.) E30A2CPS, E30A2CPR STACK SILICON DIFFUSED DIODE D F2 E POLARITY E30A2CPS (+ Type) E30A2CPR (- Type) G MAXIMUM RATING (Ta=25 CHARACTERISTIC Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage Average Forward Current Peak 1 Cycle Surge Current Junction Temperature Storage Temperature Range ) RATING 200 1.35 (Pulse duration 30 S Non-repetitive) 30 350 (10mS Condition Half sine wave 1 cycle) -40 200 -40 200 UNIT V A SYMBOL VRRM PRM IF(AV) IFSM Tj Tstg DIM MILLIMETERS DIM MILLIMETERS 0.32 F1 Φ11.7+0.1/-0 A 3.1 F2 3.85+0/-0.2 B _ G 0.5 D Φ1.45 + 0.1 L1 8.4 MAX E 1.55 DIM TYPE POLARITY S L2 R MILLIMETERS 17.5+0/-1.5 21.5+0/-1.5 kW A A ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Peak Forward Voltage Reverse Voltage Repetitive Peak Reverse Current Reverse Recovery Time Transient Thermal Resistance Reverse Leakage Current Under High Temperature Temperature Resistance ) TEST CONDITION IFM=100A IR=5mA VR=200V IF=-IR 100mA IFM=100A, Im=100mA, Pt=100mS Ta=150 , VR=VRM Junction to Case Junction to Fin MIN. 200 TYP. 0.86 1.07 MAX. 1.17 50 15 140 2.5 0.86 1.07 UNIT V V A S mV mA SYMBOL VFM VRM IRRM trr VF HIR Rth B PF L1 L2 F1 /W 1998. 2. 19 Revision No : 0 1/1