KDP610UL

SEMICONDUCTOR TECHNICAL DATA For antenna switches in mobile applications. FEATURES Array type (4 Diode in one package) Low Capacitance Low Series resistance A KDP610UL SILICON EPITAXIAL PIN TYPE DIODE TENTATIVE D 1 4 B 8 C 5 TOP VIEW BOTTOM VIEW MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL VR IF Tj Tstg RATING 30 100 150 -55 150 UNIT V F G mA SIDE VIEW DIM A B C D E F G MILLIMETERS _ 1.80 + 0.05 _ 1.20 + 0.05 _ 0.20 + 0.05 _ 0.40 + 0.05 _ 0.25 + 0.05 _ 0.45 + 0.05 Max 0.5 ULP-8 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Current Forward Voltage Total Capacitance Series Resistance ESD-Capability * * Failure cirterion : IR>100nA at VR=30V. SYMBOL IR VF CT rs TEST CONDITION VR=30V IF=10mA VR=1V, f=1MHz IF=10mA, f=100MHz C=200pF, R=0 , Both forward and reverse direction 1 pulse MIN. 100 TYP. MAX. 0.1 1.0 0.30 1.3 UNIT A V pF 2008. 1. 22 Revision No : 0 E 1/2 KDP610UL 2008. 1. 22 Revision No : 0 2/2