KDS114E_04

SEMICONDUCTOR TECHNICAL DATA VHF TUNER BAND SWITCH APPLICATIONS. FEATURES Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.5 (Typ.). CATHODE MARK KDS114E SILICON EPITAXIAL PLANAR DIODE Small Package. C 1 E 2 D F MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range ) SYMBOL VR IF Tj Tstg RATING 35 100 150 -55 150 UNIT V mA 1. ANODE 2. CATHODE DIM A B C D E F B A MILLIMETERS _ 1.60 + 0.10 _ 1.20 + 0.10 _ 0.80 + 0.10 _ 0.30 + 0.05 _ 0.60 + 0.10 _ 0.13 + 0.05 ESC Marking Type Name UD ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage Reverse Current Reverse Voltage Total Capacitance Series Resistance VF IR VR CT rs ) TEST CONDITION IF=2mA VR=15V IR=1 A VR=6V, f=1MHz IF=2mA, f=100MHz MIN. 35 TYP. 0.7 0.5 MAX. 0.85 0.1 1.2 0.9 UNIT V A V pF SYMBOL 2004. 1. 29 Revision No : 1 1/2 KDS114E rS - IF 3 SERIES RESISTANCE r S (Ω) TOTAL CAPACITANCE C T (pF) Ta=25 C f=100MHz C T - VR 10 5 3 Ta=25 C f=100MHz 1 0.5 0.3 1 0.5 0.3 1 3 5 10 30 50 100 0.1 1 3 10 30 100 FORWARD CURRENT I F (mA) REVERSE VOLTAGE V R (V) I F - VF 10 FORWARD CURRENT I F (A) -1 Ta=25 C 10 -2 10 -3 10 -4 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 FORWARD VOLTAGE V F (V) 2004. 1. 29 Revision No : 1 2/2