SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package ・Low Forward Voltage ・Fast Reverse Recovery Time ・Small Total Capacitance
KDS120
SILICON EPITAXIAL TYPE DIODE
E
: USM. : VF=0.92V (Typ.).
A
M
B
M D 3
DIM A
B C D E G H J K
: trr=1.6ns(Typ.). : CT=2.2pF (Typ.).
2
1
MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10
0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MIN
J G
C
L
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 85 80 300 * 100 * 2* 100 150 -55~150 UNIT V V mA mA A mW ℃ ℃
H N K N
L M N
3
1. CATHODE 1 2. CATHODE 2 3. ANODE
2 1
USM
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
Marking
Lot No.
Type Name
A3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA MIN. TYP. 0.61 0.74 0.92 2.2 1.6 MAX. 1.20 0.5 4.0 4.0 μ A pF nS V UNIT
2008.9. 8
Revision No : 4
1/2
KDS120
I F - VF
10 FORWARD CURRENT I F (mA) 10 10
C 10 0 Ta =
3
IR - VR
10 REVERSE CURRENT I R (µA)
Ta=100 C
2
1
Ta=75 C Ta=50 C
Ta
1 10 10
-1
Ta =-2 5
=2 5
10
C
C
-1
10
-2
Ta=25 C
-2
0
0.2
0.4
0.6
0.8
1.0
1.2
10
-3
0
20
40
60
80
FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
C T - VR
REVERSE RECOVERY TIME t rr (ns) 2.5 TOTAL CAPACITANCE C T (pF) 2.0 1.5 1.0 0.5 0
f=1MHz Ta=25 C
t rr - I F
100 50 30
Ta=25 C Fig. 1
10 5 3 1 0.5 0.1 0.3 1 3 10 30 100
0.2
1
3
10
30
100
200
REVERSE VOLTAGE VR (V)
FORWARD CURRENT I F (mA)
Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM 0
INPUT
0.01µF
DUT OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 IR
WAVEFORM
0.1 I R
50Ω
2kΩ
-6V 50ns
E t rr PULSE GENERATOR (R OUT =50Ω)
2008. 9. 8
Revision No : 4
50Ω
2/2
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