KF2N60D

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES ・VDSS= 600V, ID= 1.9A ・RDS(ON)=4.4Ω(Max) @VGS = 10V ・Qg(typ) = 6.0nC H G F F KF2N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF2N60D A C K D L B J E N M DIM MILLIMETERS _ A 6.60 + 0.20 _ 6.10 + 0.20 B _ 5.34 + 0.30 C _ D 0.70 + 0.20 _ E 2.70 + 0.15 _ 2.30 + 0.10 F 0.96 MAX G 0.90 MAX H _ 1.80 + 0.20 J _ 2.30 + 0.10 K _ 0.50 + 0.10 L _ M 0.50 + 0.10 0.70 MIN N MAXIMUM RATING (Tc=25℃) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25℃ Drain Current @TC=100℃ Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25℃ Derate above 25℃ SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg RATING 600 ±30 1.9 1.2 4.0 60 2.3 4.5 40.3 0.32 150 -55～150 mJ A UNIT V V 1 2 3 1. GATE 2. DRAIN 3. SOURCE DPAK (1) KF2N60I A H J D mJ V/ns C B DIM A B MILLIMETERS W W/℃ ℃ ℃ G F F L K M N _ 6.6 + 0.2 _ 6.1 + 0.2 _ 5.34 + 0.3 _ 0.7 + 0.2 _ 9.3 +0.3 _ 2.3 + 0.2 _ 0.76 + 0.1 _ 2.3 + 0.1 _ 0.5+ 0.1 _ 1.8 + 0.2 _ 0.5 + 0.1 _ 1.0 + 0.1 0.96 MAX _ 1.02 + 0.3 P E C D E F G H J K L M Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 3.1 110 ℃/W ℃/W 1 2 3 1. GATE 2. DRAIN 3. SOURCE N P PIN CONNECTION (KF2N60D/I) D IPAK(1) G S 2011. 3. 23 Revision No : 0 1/6 KF2N60D/I ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS ΔBVDSS/ΔTj IDSS Vth IGSS RDS(ON) ID=250㎂ , VGS=0V ID=250㎂, Referenced to 25℃ VDS=600V, VGS=0V, VDS=VGS, ID=250㎂ VGS=±30V, VDS=0V VGS=10V, ID=1A 600 2.5 0.6 3.7 10 4.5 ±100 4.4 V V/℃ ㎂ V nA Ω Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS