KMB4D5DN60QA

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for load switch and Back light inverter. D KMB4D5DN60QA Dual N-Ch Trench MOSFET H T P G L FEATURES VDSS=60V, ID=4.5A. Drain-Source ON Resistance. RDS(ON)=56m (Max.) @ VGS=10V RDS(ON)=77m (Max.) @ VGS=4.5V 8 5 B1 B2 1 4 A MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Drain Source Voltage Gate Source Voltage Drain Current DC@Ta=25 Pulsed Drain Source Diode Forward Current Drain Power Dissipation @Ta=25 Unless otherwise noted) SYMBOL PATING VDSS VGSS I D* IDP IS PD* Tj Tstg RthJA* 60 20 4.5 20 3 2 150 -55~150 62.5 /W UNIT V V A A A W DIM A B1 B2 D G H L P T MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05 FLP-8 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient KMB4D5DN 60QA Note> *Surface Mounted on 1” 1” FR4 Board, t 10sec. PIN CONNECTION (TOP VIEW) S1 G1 S2 G2 1 8 D1 D1 D2 D2 1 2 3 4 8 7 6 5 2 7 3 6 4 5 2008. 5. 27 Revision No : 0 1/4 KMB4D5DN60QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage Note> *Pulse Test : Pulse Width 300 VSDF* VGS=0V, IS=1A 0.7 1.0 V VGS=10V VGS=4.5V Ciss* Coss* Crss* Qg* Qgs* Qgd* td(on)* tr* td(off)* tf* VDS=30V, VGS=10V ID=4.5 , RG=3 VDS=30V, VGS=10V, ID=4.5A VDS=30V, VGS=0V, f=1MHz 490 45 25 10.4 5.1 2.3 2.2 12.4 34.5 30.7 5.0 nC ns pF BVDSS IDSS IGSS Vth RDS(ON)* gfs* VGS=0V, IDS=250 A VGS=0V, VDS=48V VGS= 20V, VDS=0V VDS=VGS, ID=250 A VGS=10V, ID=4.5A VGS=4.5V, ID=3A VDS=5V, ID=4.5A 60 1.0 46 64 11 1 100 3.0 56 77 m S V A nA V SYMBOL ) UNLESS OTHERWISE NOTED TEST CONDITION MIN. TYP. MAX. UNIT , Duty Cycle 2% 2008. 5. 27 Revision No : 0 2/4 KMB4D5DN60QA Fig1. ID - VDS 20 VGS=4.5V Fig2. RDS(ON) - ID 100 Ta=25 C On-Resistance RDS(ON) (mΩ) VGS=10V 90 80 70 60 50 40 30 20 0 5 10 15 20 VGS=10V VGS=4.5V Drain Current ID (A) 15 VGS=5.0V VGS=4.0V 10 5 VGS=3.5V 0 0 1 2 3 4 5 Drain - Source Voltage VDS (V) Drain Current ID (A) Fig3. ID - VGS Drain-SourceOn-Resistance RDS(ON) (mΩ) 20 VDS=5V Fig4. RDS(on) - Tj 150 VGS=10V, ID=4.5A Drain Current ID (A) 120 90 60 30 0 -75 15 10 5 125 C 25 C 0 0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150 Gate Source Voltage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Gate Threshold Voltage Vth (V) 5 4 3 2 1 0 -75 Fig 6. IS - VSDF 100 VGS=VDS ID=250µA Drain Current IS (A) 10 1 0.1 0.01 0.001 125 C 25 C -50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 Junction Temperature Tj ( C) Source-Drain Forward Voltage VSDF (V) 2008. 5. 27 Revision No : 0 3/4 KMB4D5DN60QA Fig7. VGS - Qg 10 Fig8. C - VDS 800 f=1MHz Gate to Source Voltage VGS (V) VDS=30V ID=4.5A Capacitance C (pF) 8 6 4 2 0 0 600 Ciss 400 200 Coss 0 2 4 6 8 10 12 0 Crss 10 20 30 40 Gate Charge Qg (nC) Drain - Source Voltage VDS (V) Fig9. Safe Operation Area 102 Operation in this area is limited by RDS(ON) 200µs 1ms 10ms 100ms 1s 10s DC Drain Current ID (A) 101 100 10-1 VGS= 10V SINGLE PULSE 10-2 10-2 10-1 100 101 102 103 Drain - Source Voltage VDS (V) Fig9. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty Cycle = 0.5 0.2 10-1 0.1 0.05 PDM t1 t2 Single Pulse t1 10-2 0.02 1. Duty Cycle, D = t2 2. Per Unit Base = RthJA= 62.5 C/W 10-3 10-2 10-1 100 101 102 103 10-3 10-4 Square Wave Pulse Duration tw (sec) 2008. 5. 27 Revision No : 0 4/4