SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES
With Built-in Bias Resistors. Simplify Circuit Design.
A1
KRA730U~KRA734U
EPITAXIAL PLANAR PNP TRANSISTOR
B B1 1 6 5 4 D
Reduce a Quantity of Parts and Manufacturing Process. High Packing Density.
2 3
DIM A A1 B
B1 C D G H
MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1
0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05
A
H
C
C
EQUIVALENT CIRCUIT
C B R1
EQUIVALENT CIRCUIT (TOP VIEW)
6 5 4
T G
T
Q1
Q2
1. 2. 3. 4. 5. 6.
Q1 Q2 Q2 Q2 Q1 Q1
EMITTER EMITTER BASE COLLECTOR BASE COLLECTOR
E
1
2
3
US6
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
)
SYMBOL VCBO VCEO VEBO IC RATING -50 -50 -5 -100 UNIT V V V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage TemperatureRange * Total Rating. SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT mW
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRA730U KRA731U Input Resistor KRA732U KRA733U KRA734U Note : * Characteristic of transistor only.
)
SYMBOL ICBO IEBO hFE VCE(sat) fT * TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA MIN. 120 R1 TYP. -0.1 250 4.7 10 100 22 47 MAX. -100 -100 -0.3 Type Name
5 4
UNIT nA nA
V MHz
k
Marking
6
MARK SPEC
TYPE MARK KRA730U JK KRA731U JM KRA732U JN KRA733U JO KRA734U JP
1 2 3
2002. 7. 9
Revision No : 2
1/4
KRA730U~KRA734U
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC KRA730U KRA731U Rise Time KRA732U KRA733U KRA734U KRA730U KRA731U Switching Time Storage Time KRA732U KRA733U KRA734U KRA730U KRA731U Fall Time KRA732U KRA733U KRA734U tf tstg VO=-5V VIN=-5V RL=1k tr SYMBOL TEST CONDITION MIN. TYP. 0.2 0.065 0.4 0.1 0.15 2.0 1.7 3.0 2.0 1.5 0.3 0.3 1.7 0.8 1.5 MAX. S UNIT
2002. 7. 9
Revision No : 2
2/4
KRA730U~KRA734U
h FE - I C
COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1
Ta=100 C Ta=25 C Ta=-25 C
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA730U
KRA730U
I C /IB =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
VCE =-5V
10 -0.1
-0.3
-1
-3
-10
-30
-100
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V)
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA731U
h FE - I C
-2 -1 -0.5 -0.3 -0.1 -0.05 -0.03
KRA731U
I C /I B =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
Ta=100 C Ta=25 C Ta=-25 C
VCE =-5V
10 -0.1
-0.3
-1
-3
-10
-30
-100
-0.01 -0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V)
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA732U
h FE - I C
-2 -1 -0.5 -0.3 -0.1 -0.05 -0.03
KRA732U
IC /I B =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
Ta=100 C Ta=25 C Ta=-25 C
VCE =-5V
10 -0.1
-0.3
-1
-3
-10
-30
-100
-0.01 -0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
2002. 7. 9
Revision No : 2
3/4
KRA730U~KRA734U
h FE - I C
COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) -2 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA733U
KRA733U
I C /I B =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
Ta=100 C Ta=25 C Ta=-25 C
VCE =-5V
10 -0.1
-0.3
-1
-3
-10
-30
-100
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V)
2k DC CURRENT GAIN h FE 1k 500 300 100 50 30
KRA734U
h FE - I C
-2 -1 -0.5 -0.3 -0.1 -0.05 -0.03
KRA734U
I C /I B =20
VCE(sat) - I C
Ta=100 C Ta=25 C Ta=-25 C
Ta=100 C Ta=25 C Ta=-25 C
10 -0.1
VCE =-5V
-0.3
-1
-3
-10
-30
-100
-0.01 -0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
2002. 7. 9
Revision No : 2
4/4
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