KRC860E

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density. A1 KRC860E~KRC864E EPITAXIAL PLANAR NPN TRANSISTOR B B1 Simplify Circuit Design. A C 1 6 5 2 3 4 EQUIVALENT CIRCUIT C B R1 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 H P P DIM A A1 B B1 C D H J P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2 + 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 C Q1 Q2 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR E 1 2 3 TES6 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current ) SYMBOL VCBO VCEO VEBO IC RATING 50 50 5 100 UNIT V V V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT mW ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRC860E KRC861E Input Resistor KRC862E KRC863E KRC864E ) SYMBOL ICBO IEBO hFE VCE(sat) fT * TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA MIN. 120 R1 TYP. 0.1 250 4.7 10 100 22 47 Type Name 5 4 J D MAX. 100 100 0.3 - UNIT nA nA V MHz k Marking 6 MARK SPEC TYPE MARK KRC860E NK KRC861E NM KRC862E NN KRC863E NO KRC864E NP 1 2 3 2002. 7. 10 Revision No : 2 1/4 KRC860E~KRC864E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC KRC860E KRC861E Rise Time KRC862E KRC863E KRC864E KRC860E KRC861E Switching Time Storage Time KRC862E KRC863E KRC864E KRC860E KRC861E Fall Time KRC862E KRC863E KRC864E tf tstg VO=5V VIN=5V RL=1k tr SYMBOL TEST CONDITION MIN. TYP. 0.025 0.03 0.3 0.06 0.11 3.0 2.0 6.0 4.0 5.0 0.2 0.12 2.0 0.9 1.4 MAX. S UNIT 2002. 7. 10 Revision No : 2 2/4 KRC860E~KRC864E h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 VCE =5V Ta=100 C Ta=25 C Ta=-25 C KRC860E V CE(sat) - I C 2 1 0.5 0.3 KRC860E IC /I B =20 0.1 0.05 0.03 0.01 0.1 Ta=100 C Ta=25 C Ta=-25 C 10 0.1 0.3 1 3 10 30 100 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 V CE =5V Ta=100 C Ta=25 C Ta=-25 C KRC861E VCE(sat) - I C 2 1 0.5 0.3 0.1 0.05 0.03 0.01 0.1 Ta=100 C Ta=25 C Ta=-25 C KRC861E IC /I B =20 10 0.1 0.3 1 3 10 30 100 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k 1k DC CURRENT GAIN h FE 500 300 100 50 30 V CE =5V Ta=100 C Ta=25 C Ta=-25 C KRC862E VCE(sat) - I C 2 1 0.5 0.3 0.1 0.05 0.03 0.01 Ta=100 C Ta=25 C Ta=-25 C KRC862E I C /I B =20 10 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 2002. 7. 10 Revision No : 2 3/4 KRC860E~KRC864E h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 V CE =5V Ta=100 C Ta=25 C Ta=-25 C KRC863E VCE(sat) - I C 2 1 0.5 0.3 0.1 0.05 0.03 0.01 KRC863E I C /I B =20 Ta=100 C Ta=25 C Ta=-25 C 10 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 10 VCE =5V Ta=100 C Ta=25 C Ta=-25 C KRC864E V CE(sat) - I C 2 1 0.5 0.3 0.1 0.05 0.03 0.01 0.1 0.3 1 3 10 30 100 Ta=100 C Ta=25 C Ta=-25 C KRC864E I C /I B =20 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 2002. 7. 10 Revision No : 2 4/4