KRX105U

SEMICONDUCT OR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ・Including two devices in USV. A1 KRX105U EPITAXIAL PLANAR NPN/PNP TRANSISTOR B B1 1 5 (Ultra Super mini type with 5 leads.) ・With Built-in bias resistors. ・Simplify circuit design. ・Reduce a quantity of parts and manufacturing process. A 2 3 4 D DIM A A1 B B1 C D G H MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05 C C H EQUIVALENT CIRCUIT Q1 R1 C Q2 R1 R1=4.7KΩ (Q1 , Q 2 COMMON) E C T G T B B 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 1 Q2 COMMON (EMITTER) IN (BASE) COMMON (EMITTER) OUT (COLLECTOR) OUT (COLLECTOR) IN (BASE) E USV EQUIVALENT CIRCUIT (TOP VIEW) 5 4 Marking 5 Type Name 4 Q2 Q1 BE 1 2 3 Q1 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current 1 2 3 SYMBOL VCBO VCEO VEBO IC RATING 50 50 5 100 UNIT V V V ㎃ Q2 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO IC RATING -50 -50 -5 -100 UNIT V V V ㎃ Q1, Q2 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. SYMBOL PC * Tj Tstg RATING 200 150 -55～150 UNIT ㎽ ℃ ℃ 2002. 5. 8 Revision No : 2 1/3 KRX105U Q1 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistor SYMBOL ICBO IEBO hFE VCE(sat) fT * RI TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1㎃ IC=10㎃, IB=0.5㎃ VCE=10V, IC=5㎃ MIN. 120 TYP. 0.1 250 4.7 MAX. 100 100 0.3 V ㎒ ㏀ UNIT. ㎁ ㎁ Note : * Characteristic of Transistor Only. Q2 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistor SYMBOL ICBO IEBO hFE VCE(sat) fT * RI TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1㎃ IC=-10㎃, IB=-0.5㎃ VCE=-10V, IC=-5㎃ MIN. 120 TYP. -0.1 250 4.7 MAX. -100 -100 -0.3 V ㎒ ㏀ UNIT. ㎁ ㎁ Note : * Characteristic of Transistor Only. 2002. 5. 8 Revision No :2 2/3 KRX105U h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 VCE =5V Ta=100 C Ta=25 C Ta=-25 C Q1 V CE(sat) - I C 2 1 0.5 0.3 Q2 IC /I B =20 0.1 0.05 0.03 0.01 0.1 Ta=100 C Ta=25 C Ta=-25 C 10 0.1 0.3 1 3 10 30 100 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) h FE - I C COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 VCE =-5V Ta=100 C Ta=25 C Ta=-25 C Q2 V CE(sat) - I C -2 -1 -0.5 -0.3 Q2 IC /I B =20 -0.1 -0.05 -0.03 -0.01 -0.1 Ta=100 C Ta=25 C Ta=-25 C 10 -0.1 -0.3 -1 -3 -10 -30 -100 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 2002. 5. 8 Revision No :2 3/3